Samsung Develops 8-Layer HBM4E for Nvidia's Custom NVHBM

Samsung Electronics is developing an 8-layer HBM4E product at Nvidia's request, according to Korea's Seoul Economic Daily. The chip is intended for Nvidia's custom high-bandwidth memory (NVHBM), and it uses fewer stacked layers than the 12- and 16-layer options Samsung initially prepared. Nvidia's target speed for the memory is 17–18 Gbps, about 20% faster than the 14.4 Gbps seen in Samsung's early HBM4E samples. The simplified layering is expected to reduce manufacturing difficulty in wafer thinning, precision stacking, and packaging, improving yield and supply potential. NVHBM could first appear on Nvidia's upcoming Rubin Ultra AI GPU, which is slated for next year; the platform plans to scale GPU interconnect from 72 to up to 576 units to offset lower per-GPU memory capacity. Samsung, which designs and produces DRAM, logic chips, and base dies, says it can provide one-stop custom HBM services. Industry observers note that Samsung has already shown strong transfer speeds with HBM4, and its capabilities may gain more attention as Nvidia shifts its focus from high stacking to high-speed transmission.